| 摘要 |
PURPOSE: A field emission electron source and a method of producing the same are provided to achieve a stable emission of electrons with high efficiency by suppressing the popping phenomenon. CONSTITUTION: A field emission electron source(10) includes an n-type silicon substrate(1), an ohmic electrode(2), a polysilicon layer(5), a porous polysilicon layer(6) oxidized by the rapid thermal oxidation technique and a thin gold film(7) as a thin metal film. The n-type silicon substrate(1) and the ohmic electrode(2) form the conductive substrate. The polysilicon layer(5) is formed on the n-type silicon substrate(1), and the porous polysilicon layer(6) is formed on the polysilicon layer(5). Incidentally, oxidation employed to form the layers(5,6) is not limited to rapid thermal oxidation, and chemical oxidation or nitriding can be used.
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