发明名称 LOW FREQUENCY INDUCTION TYPE HIGH FREQUENCY PLASMA REACTOR
摘要 PROBLEM TO BE SOLVED: To provide a plasma reactor suitable to soft etching treatment advantageous in supplying more electric power to ion generation than free radical generation. SOLUTION: The plasma reactor comprises a high frequency power supply (43) inductively coupled to a reaction chamber to generate a high frequency magnetic field approximately vertical to a stand on which a wafer is mounted when treatment is conducted. The reactor comprises an induction coil (42) for inductively supplying high frequency power to the reaction chamber and a split Faraday shield (45) arranged between the induction coil (42) and the reaction chamber. The split Faraday shield includes a plurality of approximately nonconductive gaps (48) for inductively supplying the high frequency power through the split Faraday shield to continue plasma.
申请公布号 JP2002237489(A) 申请公布日期 2002.08.23
申请号 JP20010347159 申请日期 2001.11.13
申请人 MATTSON TECHNOLOGY INC 发明人 SAVAS STEPHEN E
分类号 C23F4/00;H01J37/32;H01L21/302;H01L21/3065;H05H1/46 主分类号 C23F4/00
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