发明名称 |
LOW FREQUENCY INDUCTION TYPE HIGH FREQUENCY PLASMA REACTOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma reactor suitable to soft etching treatment advantageous in supplying more electric power to ion generation than free radical generation. SOLUTION: The plasma reactor comprises a high frequency power supply (43) inductively coupled to a reaction chamber to generate a high frequency magnetic field approximately vertical to a stand on which a wafer is mounted when treatment is conducted. The reactor comprises an induction coil (42) for inductively supplying high frequency power to the reaction chamber and a split Faraday shield (45) arranged between the induction coil (42) and the reaction chamber. The split Faraday shield includes a plurality of approximately nonconductive gaps (48) for inductively supplying the high frequency power through the split Faraday shield to continue plasma. |
申请公布号 |
JP2002237489(A) |
申请公布日期 |
2002.08.23 |
申请号 |
JP20010347159 |
申请日期 |
2001.11.13 |
申请人 |
MATTSON TECHNOLOGY INC |
发明人 |
SAVAS STEPHEN E |
分类号 |
C23F4/00;H01J37/32;H01L21/302;H01L21/3065;H05H1/46 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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