CRYSTAL ETCHING METHOD, AND METHOD OF PREPARING SAMPLE FOR TRANSMISSION ELECTRON MICROSCOPE

摘要

PROBLEM TO BE SOLVED: To make microcrystal defects manifested in a silicon device which are made minute. SOLUTION: A silicon substrate 200 with an injection secondary defect 201 is immersed in a nitric acid solution to form an oxide film 202 in the surface of the silicon substrate 200. At this time, a thick oxide film 203, indicated by a protruded protruberance in comparison with a part without defects, is formed in the vicinity of the injection secondary defect 201. Then the silicon substrate 200 is immersed in a mixed solution of hydrofluoric acid and ammonium fluoride to removed the oxide films 202 and 203. A part from which the oxide film 203 is removed is manifested as a recessed part 204 formed in the vicinity of the injection secondary defect.