发明名称 METHOD OF REMOVING PARTICLES ON SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To effectively remove fine particles adhered on the surface of a semiconductor wafer in a process for cleaning the wafer. SOLUTION: In a method of removing particles on a semiconductor wafer, the final process for rinsing the semiconductor wafer with ultrapure water or hydrogen water is executed after the wafer is cleaned with the mixed solution of H with F. In this final process, ultrasonic waves are irradiated into cleaning liquid after the passage of a prescribed time (preferably 20 to 30 seconds or longer).
申请公布号 JP2002237479(A) 申请公布日期 2002.08.23
申请号 JP20010032017 申请日期 2001.02.08
申请人 TEXAS INSTR JAPAN LTD 发明人 TSUGA TOMOHITO;TOMIBE MINORU;NAKAYAMA KAZUTAKA
分类号 H01L21/304;B08B3/12;(IPC1-7):H01L21/304 主分类号 H01L21/304
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