发明名称 |
METHOD OF REMOVING PARTICLES ON SEMICONDUCTOR WAFER |
摘要 |
PROBLEM TO BE SOLVED: To effectively remove fine particles adhered on the surface of a semiconductor wafer in a process for cleaning the wafer. SOLUTION: In a method of removing particles on a semiconductor wafer, the final process for rinsing the semiconductor wafer with ultrapure water or hydrogen water is executed after the wafer is cleaned with the mixed solution of H with F. In this final process, ultrasonic waves are irradiated into cleaning liquid after the passage of a prescribed time (preferably 20 to 30 seconds or longer).
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申请公布号 |
JP2002237479(A) |
申请公布日期 |
2002.08.23 |
申请号 |
JP20010032017 |
申请日期 |
2001.02.08 |
申请人 |
TEXAS INSTR JAPAN LTD |
发明人 |
TSUGA TOMOHITO;TOMIBE MINORU;NAKAYAMA KAZUTAKA |
分类号 |
H01L21/304;B08B3/12;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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