发明名称 STENCIL MULTILAYER MASK
摘要 <p>PROBLEM TO BE SOLVED: To provide a stencil multilayer mask that can withstand the application of high-acceleration electron beams and allows a gap to be formed at a mask layer so that an accurate and thin pattern can be formed with a thick resist. SOLUTION: The stencil multilayer mask comprises a stencil section for absorbing heat than can cope with an exposure light source or the like that is a high-acceleration electron beam for sensitizing charged particles by strong X rays such as SOR light and an electron beam that is a charged particle and an ion beam, and a stencil for forming a pattern. The stencil multilayer mask having each layer configuration coping with the exposure light source comprises a pattern opening 31, a pattern 32, a gap 61, an electrical connection means 41 for preventing electrification, a through hole 33 for burying a conductive material, and a frame 51 that can be fixed to a projection aligner easily.</p>
申请公布号 JP2002237447(A) 申请公布日期 2002.08.23
申请号 JP20010073099 申请日期 2001.02.08
申请人 PD SERVICE:KK 发明人 HISATSUGU NORISHIGE
分类号 G03F1/20;G03F1/22;G03F1/24;G03F1/40;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 G03F1/20
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