| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a low-cost polysilicon-to-polysilicon capacitor, which is used in a CMOS or Bi CMOS integrated circuit, and which is not complicated. SOLUTION: The method, which is integrated with a Bi CMOS process and which forms the polysilicon-to-polysilicon capacitor, comprises a step in which the lower-part plate electrode of the capacitor is formed, while the gate electrode of a CMOS transistor is stuck and a step in which an upper-part SiGe plate electrode is formed, while the SiGe base region of a heterojunction bipolar transistor is grown.
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