发明名称 PLASMA TREATMENT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a plasma treatment device which attains plasma having high density and high uniformity over the whole of an object to be treated by coping with a wide-ranging change in various parameters in the case where the plasma is produced using VHF or UHF band high-frequency waves. SOLUTION: The plasma treatment device is provided with a vacuum container 1, a treating chamber 2 formed inside the container 1, a gas feeding path 5 for feeding gas to the chamber 2, a support electrode 3 which is provided inside the chamber 2 and supports an object 4 to be treated, a disc-shaped antenna 11 for deriving the UHF or VHF band high-frequency waves inside the chamber 2, a high-frequency waveguide 8 for feeding the high-frequency waves to the antenna 11 and an introducing window 14 of a dielectric material which partitions the chamber 2 and the antenna 11, and further, the device has an annular conductor 13 which is provided between the antenna 11 and the window 14 and is arranged under the peripheral edge of the antenna 11 by bringing the side surface of the conductor 13 in contact with the peripheral edge part of the antenna 11.
申请公布号 JP2002237483(A) 申请公布日期 2002.08.23
申请号 JP20010031283 申请日期 2001.02.07
申请人 HITACHI LTD 发明人 KAZUMI HIDEYUKI;EDAMURA MANABU;IKENAGA KAZUYUKI;OTAKE ATSUSHI
分类号 H05H1/46;H01J37/32;H01L21/302;H01L21/3065 主分类号 H05H1/46
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