发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING HYBRID INTEGRATED CIRCUIT DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To solve the problem of the conventional method of manufacturing a hybrid integrated circuit device requiring many assembling processes, since many circuit elements are fixed on a hybrid integrated circuit device which comprises a printed board, etc., mounted with circuit devices and a semiconductor element out of the circuit elements is wire-bonded, using a metal fine wire. SOLUTION: A semiconductor device to be used in the hybrid integrated circuit is, such that a semi-power transistor 13 is fixed on a heat sink 11 and is connected with an extraction electrode 12 provided adjacent to the semi-power transistor 13 via a metal fine wire 16 and then is molded with an insulation resin 17. The molded semiconductor device is fixed on a mount substrate formed with a conductor pattern. As a result of this method, the manufacturing process of the hybrid integrated circuit device can be simplified and the number of processes can be reduced.
申请公布号 JP2002237559(A) 申请公布日期 2002.08.23
申请号 JP20010034674 申请日期 2001.02.09
申请人 SANYO ELECTRIC CO LTD 发明人 TOYOOKA SHINICHI
分类号 H01L23/12;H01L21/50;H01L21/56;H01L23/29;H01L23/48;H01L25/04;H01L25/18 主分类号 H01L23/12
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