MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve the reliability of an electrode or wiring of a polyside structure by making preventable the reaction generated between a high-melting- point metal and polycrystal silicon even when oxidizing the surface of the electrode or wiring, and by eliminating the local intrusion of the high-melting- point metal into the polycrystal silicon. SOLUTION: In a manufacturing method of a semiconductor device, there are provided a step for forming on a silicon substrate 601 a polycrystal silicon film 603 of 100 nm in its thickness via a silicon oxide film 602 of 10 nm in its thickness; a step for forming thereafter on the polycrystal silicon film 603 a W silicide film 604 of 200 nm in its thickness which contains in it nitrogen of 0.1-5%; a step for so subjecting subsequently an intermediate product to heat treatment of 800-900 deg.C as to form in the interface between the polycrystal silicon film 603 and the W silicide film 604 a WSixNy layer 605 (reaction preventing layer) of about 5 nm in its thickness wherein nitrogen having high concentration not lower than 1021 cm-3 is segregated; and a step for so processing next the respective films 603-605 as to form a gate electrode pattern of the semiconductor device.