METHOD OF FORMING ELECTRODE PASSED THROUGH SUBSTRATE, AND SUBSTRATE HAVING THROUGH ELECTRODE

摘要

PROBLEM TO BE SOLVED: To form a through electrode passed through a silicon substrate and having a high aspect ratio. SOLUTION: A through hole 12 having a high aspect ratio is formed by a photo-excited electrolytic polishing process in a silicon substrate 11. The inner wall of the through hole 12 is subjected to oxidation to form an oxide film 21 as an insulating layer. Then a metal 23 is filled into the through hole 12 by a melted metal refilling process to form a through electrode (23). The through electrode 12 having a high aspect ratio can be easily formed in the substrate 11, and thus there can be easily achieved a semiconductor package having, e.g. stacked silicon IC chips.