发明名称 METHOD FOR REMOVING OVERHUNG USING SPUTTER ETCHING AFTER DEPOSITING LINER/BARRIER/SEED LAYERS
摘要 PROBLEM TO BE SOLVED: To remove the overhung part of a physical vapor deposited film. SOLUTION: In order to remove the overhung part of the physical vapor deposited film, after liner/barrier/seed (110, 112 and 214) deposition, sputter etching is conducted. Physical vapor deposited film(PVD) process generally generates liner/barrier layers (110 and 214) or a seed layer (112) having a thick overhung part (111) at the upper corner of a trench (108), a via (106) or a contact (212). After the deposition, sputter etching is performed by using a low bias, the thickness of the overhung part (111) is reduced and a seam generated in subsequent important processes is avoided.
申请公布号 JP2002237519(A) 申请公布日期 2002.08.23
申请号 JP20010351290 申请日期 2001.11.16
申请人 TEXAS INSTR INC <TI> 发明人 LIN CHING-TE;LU JIONG-PING;HAIDER ASAD M
分类号 C23C14/16;H01L21/28;H01L21/288;H01L21/302;H01L21/3065;H01L21/3213;H01L21/768;(IPC1-7):H01L21/768;H01L21/306 主分类号 C23C14/16
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