| 摘要 |
PROBLEM TO BE SOLVED: To avoid the lowering of quality when chlorosilane liquor consisting essentially of trichlorosilane and silicon tetrachloride obtained from waste gas discharged from a reducing furnace in the production of polycrystalline silicon by a vapor growth method is passed through a distilling column to refine the trichlorosilane. SOLUTION: The rate of parting of trichlorosilane in a distilling column 10 to the column top side is controlled to the range of 0.9 to <0.999. The emergent contamination of the trichlorosilane with low boiling point phosphorus compounds due to a change of distilling conditions is prevented and the quality of the trichlorosilane is stabilized on a high level.
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