| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device and manufacturing thereof that can realize especially a highly integrated DRAM having a small number of processes and a fine cell area for a semiconductor memory device. SOLUTION: The device comprises a memory cell transistor formed on a semiconductor substrate 10, an insulation film 42 that covers the upper face and a side face of a gate electrode 20 of the memory cell transistor, a layer-to- layer insulation film 36 that a through hole 40 opening on a source diffusion layer 24 and a through-hole 38 opening on a drain diffusion layer 26 are formed, a capacitor electrode 46 that is formed on an inside wall and a bottom of the through-hole 40 and connected to the source diffusion layer 24, a capacitor that has a capacitor dielectric film 48 covering the capacitor storage electrode 46 and a capacitor facing electrode 54 covering the capacitor dielectric film 48, and a contacting conductance film 44 that is formed on the inside wall and on the bottom of the through-hole 38 and connected to the drain diffusion layer 26. |
