发明名称 |
MANUFACTURING METHOD AND DEVICE OF SEMICONDUCTOR ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for easily manufacturing a thin film by continuously generating uniform glow discharge plasma under pressure near atmospheric pressure for performing glow discharge plasma treatment stably at manufacturing the thin film in a manufacturing process of a semiconductor element. SOLUTION: Feed gas is introduced between counter electrodes under pressure near atmospheric pressure in a laminate formation process of the semiconductor element, and a pulsive electric field is applied between counter electrodes for changing the feed gas into the glow discharge plasma and for forming the thin film in the manufacturing method of the semiconductor element. |
申请公布号 |
JP2002237463(A) |
申请公布日期 |
2002.08.23 |
申请号 |
JP20010226885 |
申请日期 |
2001.07.27 |
申请人 |
SEKISUI CHEM CO LTD |
发明人 |
SHIMONISHI KOJI;EGUCHI YUJI |
分类号 |
H05H1/46;B01J19/08;C23C16/503;C23C16/509;C23C16/515;C23C16/517;H01L21/205;H01L31/04 |
主分类号 |
H05H1/46 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|