| 摘要 |
PROBLEM TO BE SOLVED: To provide an SRAM whose reliability can be enhanced. SOLUTION: The memory cell of the SRAM has a structure which comprises five conductive layers in the upper part of a field. A flip-flop is constituted of two gate-to-gate electrode layers situated in the first-layer conductive layer, two drain-to-drain connection layers situated in the second-layer conductive layer and two drain-to-gate connection layers situated in the third-layer conductive layer. When a direction, in which subword lines(SWLs) are extended is made different from a direction in which VSS interconnections (ground lines) are extended, the VSS interconnections connected to a plurality of memory cells MCs, selected by the same subword lines(SWLs), are made different from each other. |
