| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device using a DTMOS, which will not cause increase in defects of off-leak, even if the distance from the gate electrode end to the isolation region is reduced, and to provide its manufacturing method. SOLUTION: The isolation region comprises a deep isolation region 22, whose width is substantially fixed and a shallow isolation region 23 consisting of an STI. In the shallow isolation region 23 consisting of an STI, a bird's beak is small and off-leak defects due to stress caused by a bird's beak of a DTMOS 2 consisting of a PMOS can be prevented. Furthermore, since a boundary part isolation region is a composite isolation region, an insulation film can be embedded readily in an insulation region. Since the width of the deep isolation region 22 is substantially fixed, the deep isolation region 22 can be formed easily.
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