| 摘要 |
PROBLEM TO BE SOLVED: To provide InGaN of which quality and superior crystallinity. SOLUTION: The method for growing an indium/gallium semiconductor nitride semiconductor by organic metal vapor-phase growth grows the indium/gallium semiconductor nitride semiconductor, expressed by the general formula InXGa1-XN (0<X<5), doped with a P-type impurity on a gallium nitride layer at a growing temperature of higher than 600 deg.C by using the gas of gallium source, the gas of indium source, the gas of nitrogen source and gas which includes the P-type impurity. |
