| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing a SiC film, by which the SiC film having excellent crystallinity and flatness can be obtained without heating materials for forming the SiC film to a high temperature, and to provide a process for forming a SiC ground layer using the method and a SiC multilayer film structure. SOLUTION: The SiC film is formed on a main surface of a member containing Si by supplying a gaseous organic silicon compound having a Si-H bond and Si-C bond. Further, the SiC multilayer film structure is produced by forming a SiC ground layer on the main surface of the member containing Si by supplying the gaseous organic silicon compound having the Si-H bond and the Si-C bond and then forming a prescribed SiC film on the SiC ground layer. |
