ION IMPLANTATION APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an ion implantation apparatus which can avoid discharge tracks on the rear surface of a silicon wafer which has been generated, when ion implantation is carried out over the wafer at a temperature exceeding 300 deg.C with use of a 10 mA-100 mA region ion implantation apparatus. SOLUTION: An electron source is positioned on the surface of the wafer for an oxygen ion beam to be irradiated and outside a line of the ion beam, so that an electron beam is irradiated thereon by the same amount as an ion beam current value or less, with electron energy set at 50 eV or more.