发明名称 Ferromagnetic tunnel junctions with enhanced magneto-resistance
摘要 A tunnel junction having a topography and/or interface layers that enhance its magneto-resistance. The topography of the tunnel junction maximizes spin tunneling from areas of ferromagnetic crystalline grains having high polarization and minimizes the effects of defect scattering at grain boundaries. The interface layers enhance magnetic polarization properties of ferromagnetic layers near interfaces to an insulating layer in a tunnel junction.
申请公布号 US2002114972(A1) 申请公布日期 2002.08.22
申请号 US20000672794 申请日期 2000.02.11
申请人 ANTHONY THOMAS C 发明人 ANTHONY THOMAS C
分类号 G11B5/39;H01F10/08;H01F10/32;H01F41/14;H01L43/08;(IPC1-7):H01L29/76 主分类号 G11B5/39
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