| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent damage to a barrier layer on the upper edge of a gate electrode in eliminating the barrier layer, by separately forming contact holes of a source line region and a drain region wherein the contact hole of the drain region is formed while the source line region is masked. CONSTITUTION: A gate electrode wherein a mask insulation layer(33) is stacked is formed on a semiconductor substrate(31). A source/drain region(34,35) is formed in the substrate at both sides of the gate electrode. A sidewall insulation layer(36) is formed on the side surface of the gate electrode. A barrier layer(37) is formed on the entire surface. An interlayer dielectric is formed between the gate electrodes on the source/drain region. The first mask layer is formed in a portion except the source region. The interlayer dielectric and the barrier layer are selectively removed to form the source line region(40) by using the first mask layer. The second mask layer having an open region is selectively formed on the drain region. The interlayer dielectric and the barrier layer are selectively eliminated to form the contact hole(42) on the drain region by using the second mask layer.
|
