发明名称 |
Spin valve magnetoresistive sensor for high temperature environment using iridium managnese |
摘要 |
A magnetoresistive (MR) read sensor fabricated on a substrate includes a ferromagnetic layer that is exchange coupled with an antiferromagnetic layer made of a defined composition of iridium manganese. A tantalum layer is used so that the exchange field and coercivity do not change with variations in annealing temperature. The antiferromagnetic layer is formed with a material composition of IrxMn100-x wherein x is in the range of 15<x>23. In an embodiment of a spin valve structure, the tantalum layer is disposed over the substrate and the antiferromagnetic layer is in direct contact with a pinned ferromagnetic layer. In another embodiment, the IrMn layer is formed over a soft active layer. In a third embodiment using exchange pinning, spaced IrMn regions are formed over the active MR layer to define the sensor track width.
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申请公布号 |
US2002114113(A1) |
申请公布日期 |
2002.08.22 |
申请号 |
US20020047386 |
申请日期 |
2002.03.28 |
申请人 |
LEDERMAN MARCOS M.;NEPELA DANIEL A.;TONG HUA-CHING |
发明人 |
LEDERMAN MARCOS M.;NEPELA DANIEL A.;TONG HUA-CHING |
分类号 |
G11B5/39;(IPC1-7):G11B5/39 |
主分类号 |
G11B5/39 |
代理机构 |
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地址 |
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