Halbleiter mit integriertem Kühler

摘要

The component has a number of elementary transistor fingers where the passivation layer is broken for a homogeneous emitter contact. A subcollector (4) is buried in the substrate (6) under a mesa (3) which forms the collector with contact metallisations (mC) on both sides. A base layer (2) is partly covered by an emitter layer (1) between base metallisations (mB) where the bridge portion (PI) of the heat sink rests on the passivation (P). The heat sink may be connected to an earth plane on the back of the substrate.