发明名称 Electron beam exposure method having good linearity with respect to producing fine patterns
摘要 A variable shaped beam exposure method and a pattern forming method using the same exhibit excellent linearity insofar as the variation in measured critical dimension from design critical dimension is concerned. First, the design critical dimension of one of a plurality of patterns that can be formed through the use of the variable shaped beam exposure method is determined. If the value of the critical dimension exceeds a predetermined value, the selected pattern is formed using a first exposure dose which has previously designated for this case. On the other hand, if the value of the critical dimension is less than the predetermined value, the selected pattern is formed using a second exposure dose that is equal to the first exposure dose plus a supplementary exposure dose.
申请公布号 US2002115020(A1) 申请公布日期 2002.08.22
申请号 US20010012561 申请日期 2001.12.12
申请人 YANG SEUNG-HUNE 发明人 YANG SEUNG-HUNE
分类号 G03F7/20;H01J37/302;H01L21/027;(IPC1-7):G03C5/00 主分类号 G03F7/20
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