发明名称 |
METHOD FOR DEPOSITING NITRIDE LAYERS |
摘要 |
A method of depositing a nitrogen rich nitride film, such as a tantalum nitride (TaN) film, which can be used with low-k dielectric films. An initial nitrogen rich layer is achieved by exposing a target to a nitrogen rich atmosphere prior to sputtering the target and deposition of the sputtered target material onto a substrate. Thereafter, the flow of N2 can be controlled during processing to create a desired nitrogen concentration in the film. The nitrogen flow may be held constant during processing, varied during processing, or terminated during processing to control the nitrogen concentration in the layer(s). |
申请公布号 |
WO0218653(A3) |
申请公布日期 |
2002.08.22 |
申请号 |
WO2001US26751 |
申请日期 |
2001.08.28 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
RENGARAJAN, SURAJ;HASHIM, IMRAN;CHIANG, TONY P.,;DING, PEIJUN |
分类号 |
C23C14/00;C23C14/06;H01L21/285;H01L21/318 |
主分类号 |
C23C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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