发明名称 |
ADDRESS BUFFER CIRCUIT FOR ASYNCHRONOUS SDRAM |
摘要 |
PURPOSE: An address buffer circuit for asynchronous SDRAM(Synchronous Dynamic Random Access Memory) is provided to prevent an address multi selection by controlling a width of an ATD(Address Transition Detection) pulse and securing an AC(Activation and Counter-activation) margin inter selection signal. CONSTITUTION: A first delay circuit includes a plurality of delay circuits for outputting a first signal(A) which has the same phase of an input address(ADDR). A second delay circuit includes a plurality of delay circuits for outputting a second signal(AB) which has an inverse-phase of the address(ADDR). A clock generation circuit(25) generates a first clock(ATD) in response to the signal which has the phase of the address(ADDR) and the signal which has the same phase opposite to the address(ADDR). The first signal(A) and the second signal(AB) perform a logic transition respectively in a first state of the first clock(ATD).
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申请公布号 |
KR20020067324(A) |
申请公布日期 |
2002.08.22 |
申请号 |
KR20010007847 |
申请日期 |
2001.02.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, HYEON SU;LEE, YEONG GEUN |
分类号 |
G11C8/06;(IPC1-7):G11C8/06 |
主分类号 |
G11C8/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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