发明名称 Polymer, resist composition and patterning process
摘要 A polymer comprising recurring units of formula (1) and/or (2) wherein R1 and R2 are H, C1-15 alkyl, acyl or alkylsulfonyl or C2-15 alkoxycarbonyl or alkoxyalkyl which may have halogen substituents; R3 and R4 are H, C1-15 alkyl or alkoxy or C2-15, alkoxyalkyl which may have halogen substituents, and R3 and R4 may together bond with the carbon atom to form an aliphatic ring, or R3 and R4, taken together, may be an oxygen atom; and k=0 or 1, and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.
申请公布号 US2002115821(A1) 申请公布日期 2002.08.22
申请号 US20010003117 申请日期 2001.12.06
申请人 NISHI TSUNEHIRO;KINSHO TAKESHI 发明人 NISHI TSUNEHIRO;KINSHO TAKESHI
分类号 G03F7/004;C08G61/02;C08G61/08;(IPC1-7):C08G65/34 主分类号 G03F7/004
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