发明名称 MOS DC Voltage booster circuit
摘要 A MOSFET voltage booster circuit generates a stepped up DC voltage from a lower magnitude supply voltage and a periodic input signal. A plurality of such MOSFET voltage booster circuits, which are formed only from components integrated in the MOSFET integrated circuit chip, may be formed on the chip near corresponding sections of circuitry requiring a high DC bias signal. A free-running oscillator circuit may provide the required periodic input signal.
申请公布号 US3942047(A) 申请公布日期 1976.03.02
申请号 US19740475366 申请日期 1974.06.03
申请人 MOTOROLA, INC. 发明人 BUCHANAN, JOHN K.
分类号 H02M3/07;(IPC1-7):H02M3/15 主分类号 H02M3/07
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