发明名称 |
Hydrogen sensor comprises gas-sensitive layer with measuring structure applied to it, silicon dioxide filtering layer covering gas-sensitive layer and heating structure |
摘要 |
<p>Hydrogen sensor comprises a gas-sensitive layer having a measuring structure applied to it; a silicon dioxide filtering layer covering the gas-sensitive layer; and a heating structure. The surface of the sensor including all contacting points is covered with a protective layer made from a material which reduces splitting of hydrocarbons at the operating temperature of the sensor. An independent claim is also included for a process for the production of a silicon dioxide protective layer on the hydrogen sensor by depositing silicon dioxide as reaction product from a silicon-containing gas onto the surface of the sensor using a CVD method.</p> |
申请公布号 |
DE10105580(A1) |
申请公布日期 |
2002.08.22 |
申请号 |
DE2001105580 |
申请日期 |
2001.02.07 |
申请人 |
SIEMENS AG |
发明人 |
FLEISCHER, MAXIMILIAN;FRANK, JOACHIM;MEIXNER, HANS;WEH, THOMAS |
分类号 |
G01N27/12;G01N33/00;(IPC1-7):G01N27/12;G01R27/02 |
主分类号 |
G01N27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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