发明名称 Hydrogen sensor comprises gas-sensitive layer with measuring structure applied to it, silicon dioxide filtering layer covering gas-sensitive layer and heating structure
摘要 <p>Hydrogen sensor comprises a gas-sensitive layer having a measuring structure applied to it; a silicon dioxide filtering layer covering the gas-sensitive layer; and a heating structure. The surface of the sensor including all contacting points is covered with a protective layer made from a material which reduces splitting of hydrocarbons at the operating temperature of the sensor. An independent claim is also included for a process for the production of a silicon dioxide protective layer on the hydrogen sensor by depositing silicon dioxide as reaction product from a silicon-containing gas onto the surface of the sensor using a CVD method.</p>
申请公布号 DE10105580(A1) 申请公布日期 2002.08.22
申请号 DE2001105580 申请日期 2001.02.07
申请人 SIEMENS AG 发明人 FLEISCHER, MAXIMILIAN;FRANK, JOACHIM;MEIXNER, HANS;WEH, THOMAS
分类号 G01N27/12;G01N33/00;(IPC1-7):G01N27/12;G01R27/02 主分类号 G01N27/12
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