发明名称 ELECTRON GUN EMPLOYING COLD CATHODE
摘要 PURPOSE: An electron gun employing a cold cathode is provided to improve insulating characteristic between a cathode and a gate electrode to avoid short due to micro pin holes in an insulating layer between the cathode and the gate electrode. CONSTITUTION: An electron gun comprises a substrate(41) of glass or wafer, a cathode(42) of silver paste on the substrate(41), a first insulating layer(43), and a second insulating layer(44). The first insulating layer(43) is formed on the cathode(42) with SiO, SiO2, Si3N4 or BN. The thickness of the first insulating layer(43) is 500nm to 2 μm. The first insulating layer(43) has cavities(47) opening the cathode(42). Electron emitting sources(46) are formed on the cathode(42) through the cavities(47). The second insulating layer(44) is formed on the first insulating layer(43) with ceramic material such as oxide of Pb, Si, B or Al. Gate electrode(45) is formed on the second insulating layer(44) with metal grid.
申请公布号 KR20020067190(A) 申请公布日期 2002.08.22
申请号 KR20010007607 申请日期 2001.02.15
申请人 SAMSUNG SDI CO., LTD. 发明人 AHN, JI HUN;CHOI, JONG SEO;HAN, DONG HUI;LEE, HYEOK BOK
分类号 H01J1/30;(IPC1-7):H01J1/30 主分类号 H01J1/30
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