| 摘要 |
<p>When a silicon thin film is formed at a power density of at least 100 mW/cm2 by using a vertical plasma CVD device with a substrate (21), having a conductive film (22) formed on the surface thereof and an area of at least 1200 cm2, held on a substrate holder (1) and allowed to face an electrode, a separation groove (24) is provided in the conductive film (22) to thereby electrically insulate the substrate holder (1) from the conductive film (22) on the surface of the substrate (21).</p> |
