Method of forming noble metal pattern,申请号US20020117101-传众专利搜索

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发明名称	Method of forming noble metal pattern
摘要	A process for high resolution patterning of noble metals, such as platinum, for forming various semiconductor devices, such as capacitors or wiring patterns, is disclosed.
申请公布号	US2002115231(A1)	申请公布日期	2002.08.22
申请号	US20020117101	申请日期	2002.04.08
申请人	LANE RICHARD H.	发明人	LANE RICHARD H.
分类号	H01L21/02;H01L21/3213;H01L21/768;(IPC1-7):H01L21/00	主分类号	H01L21/02
代理机构		代理人
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