发明名称 |
Method for forming a dielectric layer of a semiconductor device and a capacitor using the same |
摘要 |
A method for forming a dielectric layer of a semiconductor device is disclosed. A semiconductor wafer is loaded into a reaction chamber. A source gas mixture containing at least two mixed chemical reactants is introduced into the reaction chamber, thereby chemically adsorbing a portion of the source gas mixture onto a surface of the semiconductor wafer. The chamber is purged or pumped to remove physisorbed reactants therefrom. The source gas mixture chemically adsorbed on the surface of the semiconductor wafer is oxidized to form an atomic layer.
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申请公布号 |
US2002115275(A1) |
申请公布日期 |
2002.08.22 |
申请号 |
US20020076233 |
申请日期 |
2002.02.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI SUNG-JE |
分类号 |
H01L27/108;C23C16/40;C23C16/44;C23C16/455;H01L21/02;H01L21/316;(IPC1-7):H01L21/823 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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