| 摘要 |
The image sensor comprises a semiconductor body (1) having gate electrodes (3, 4) at a surface (2), each gate electrode being combined with the semiconductor body (1) and an intermediate dielectric (14) so as to form a MOS capacitor (5), which gate electrodes (3, 4) include a portion (6) which is thinner than a surrounding zone (7), a photosensitive region (8) in the semiconductor body (1) being situated below each gate electrode (3, 4), said photosensitive region (8) being capable of absorbing electromagnetic radiation and converting said radiation to electric charge. The MOS capacitors (5) are arranged next to each other so as to form an array (9), with the gate electrodes (3, 4) in a row (10) electrically contacting each other, and the gate electrodes (3, 4) in a column (11) being mutually separated only by electrically insulating material (12). The image sensor has an improved photosensitivity, particularly for electromagnetic radiation with a short wavelength. |
