| 发明名称 |
Additional capacitance for MIM capacitors with no additional processing |
| 摘要 |
Capacitance for MIM capacitors is increased by connecting another interdigitated pattern at the poly level in parallel with overlying patterns at the metal levels. The poly layout is optimized to maximize intralevel capacitive coupling through sidewall nitride.
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| 申请公布号 |
US2002113292(A1) |
申请公布日期 |
2002.08.22 |
| 申请号 |
US20010008144 |
申请日期 |
2001.11.08 |
| 申请人 |
APPEL ANDREW T. |
发明人 |
APPEL ANDREW T. |
| 分类号 |
H01L21/02;H01L23/522;H01L27/08;(IPC1-7):H01G4/005;H01G4/228;H01L29/00 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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