Method for refreshing stored data in an electrically erasable and programmable non-volatile memory

摘要

Method for refreshing data stored in an electrically erasable and programmable non-volatile semiconductor memory including at least one two-dimensional array of memory cells containing a plurality of individually erasable and programmable memory pages. Each time a request to modify a content of a memory page is received by the memory, the method provides for modifying the content of said memory page and submitting a portion of the two-dimensional array to a refresh procedure. The refresh procedure includes detecting memory cells of that memory portion that have partially lost a respective datum stored therein and reprogramming the datum in the detected memory cells.