| 摘要 |
PURPOSE: To provide a reference voltage generating method used for read-out operation of a memory cell having amplifying operation and to provide a dummy cell. CONSTITUTION: A memory cell MCn1 is constituted of read-out NMOS transistors QR, write-in transistors QW, and coupling capacitors Cc, and a dummy cell DC1 has such constitution that two memory cells are connected in series. This dummy cell is arranged at the remotest end of each data line with respect to a sense amplifier. Reference voltage is generated by making difference among quantity of current flowing in respective read-out NMOS transistors. Therefore, a DRAM having higher operation speed, higher integration, and lower power consumption compared with a conventional one can be realized.
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