| 摘要 |
A method of forming a TFT-LCD device with a rough pixel electrode is disclosed. The method comprises the following steps. First, a first metal layer is formed on a substrate. And then a first etching procedure is performed to etch the first metal layer for defining a gate structure. Next a first insulating layer is formed on the gate structure and the substrate. And a semiconductor layer is formed on the first insulating layer above the gate structure. Then a second metal layer is formed on the first insulating layer and the semiconductor layer. A second etching procedure is performed to etch the second metal layer to define drain/source structures. Subsequently a passivation layer is formed on the drain/source structures. A pixel electrode is next formed on the passivation layer to electrically connect the source structure, wherein the pixel electrode have a rough surface cause at least one sort of bumps are formed above the substrate. The bumps comprises first bumps and second bumps, wherein the first metal layer are defined in the first etching procedure simultaneously and second bumps made of the second metal layer are defined in the second etching procedure simultaneously.
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