发明名称 |
Method of tisin deposition using a chemical vapor deposition process |
摘要 |
A method of forming a titanium silicide nitride (TiSiN) layer is described. A titanium nitride (TiN) layer is deposited on a substrate, the process chamber is purged to remove reaction by-products therefrom and than the titanium nitride (TiN) layer is exposed to a silicon-containing gas to form the titanium suicide nitride (TiSiN) layer. Alternatively, the substrate may be exposed to the silicon-containing gas in a process chamber different from the one used for the titanium nitride (TiN) layer deposition.
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申请公布号 |
US2002114886(A1) |
申请公布日期 |
2002.08.22 |
申请号 |
US20010026378 |
申请日期 |
2001.12.21 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CHOU JING-PEI;KAO CHIEN-TEH;LAI CHIUKIN STEVEN;MOSELY RODERICK CRAIG;CHANG MEI;CHEN FUFA |
分类号 |
C23C16/34;C23C16/44;C23C16/455;C23C16/458;C23C16/48;C23C16/509;C23C16/56;H01J37/32;H01L21/285;H01L21/768;(IPC1-7):C23C16/14 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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