PHOTORESIST COMPOSITION FOR DEEP UV AND PROCESS THEREOF

摘要

The present invention relates to a chemically amplified system, which is, sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a polymer that is insoluble an aqueous alkaline solution and comprises at least one acid labile group, b) a compound capable of producing an acid upon radiation. The present invention comprises a polymer that is made from a alicyclic hydrocarbon olefin, an acrylate with a pendant cyclic moiety, and a cyclic anhydride. The present invention also relates to a process for imaging such a photoresist.