发明名称 |
Rhodium-rich oxygen barriers |
摘要 |
A structure and method are disclosed for forming a capacitor for an integrated circuit. The capacitor includes a rhodium-rich structure, a rhodium oxide layer in direct contact with the rhodium-rich structure, a capacitor dielectric in direct contact with the rhodium oxide layer and a top electrode over the capacitor. The rhodium-rich structure can include rhodium alloys and the capacitor dielectric preferably has a high dielectric constant.
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申请公布号 |
US2002113260(A1) |
申请公布日期 |
2002.08.22 |
申请号 |
US20010789335 |
申请日期 |
2001.02.20 |
申请人 |
YANG HAINING;GEALY DAN;SANDHU GURTEJ S.;RHODES HOWARD;VISOKAY MARK |
发明人 |
YANG HAINING;GEALY DAN;SANDHU GURTEJ S.;RHODES HOWARD;VISOKAY MARK |
分类号 |
C23C16/18;H01L21/02;H01L21/28;H01L21/285;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
C23C16/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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