发明名称 |
Silicon-germanium solar cell having a high power efficiency |
摘要 |
A silicon-germanium thin-film solar cell having a quantum well structure as an active base layer within the space-charge region of the silicon p-n diode junction. The quantum well structure is composed of a sequence of silicon and germanium layers. In this manner, a highly absorbent base layer is produced in a silicon solar cell.
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申请公布号 |
US2002112755(A1) |
申请公布日期 |
2002.08.22 |
申请号 |
US20010008631 |
申请日期 |
2001.12.06 |
申请人 |
KIBBEL HORST;KOENIG ULF;KONLE JOHANNES;PRESTING HARTMUT |
发明人 |
KIBBEL HORST;KOENIG ULF;KONLE JOHANNES;PRESTING HARTMUT |
分类号 |
H01L31/04;H01L31/00;H01L31/0352;H01L31/06;H01L31/072;H01L31/0745;(IPC1-7):H01L31/00 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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