| 摘要 |
<p>A semiconductor device comprises an embedded insulation layer (101) formed on a semiconductor substrate (100), plural power semiconductor elements (2, 3) formed on a semiconductor substrate (100) on the embedded insulation layer, a trench (4) formed on the semiconductor substrate and isolating between the power semiconductor elements, and an isolator (5) insulating and driving control electrodes of the power semiconductor elements, and the power semiconductor elements (2, 3) such as transistors can be used, being connected to each other in series. <IMAGE></p> |
