METAL-FERRO-METAL OXIDE SEMICONDUCTOR/METAL-FERRO-METAL SEMICONDUCTOR NON-VOLATILE MEMORY TRANSISTORS AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A method for fabricating a metal-ferro-metal oxide semiconductor(MFMOS)/metal-ferro-metal semiconductor(MFMS) non-volatile memory transistors is provided to prevent a ferroelectric material from being damaged in a plasma etching process by obviating the necessity of a gate stack etching process and minimizing etch-inducing damage. CONSTITUTION: A bottom electrode(16) is formed. A ferroelectric layer(24) is deposited over an active region beyond the margins of the bottom electrode. A top electrode(26) is deposited on the ferroelectric layer. A structure obtained by the above-described steps is metalized to form a source electrode(32), a gate electrode(34) and a drain electrode(36).