发明名称 |
High voltage/high beta semiconductor devices and methods of fabrication thereof |
摘要 |
<p>A high operating voltage bipolar transistor (42) includes a base including a first region (52) of a lightly doped layer (44) of semiconductor material of a first conductivity type. The transistor (42) also includes a collector including a buried layer (50) and a collector region (48). The lightly doped layer (44) is formed over the buried layer (50) and the collector region (48) extends through the lightly doped layer (44) and contacts the buried layer (50). The transistor (42) also includes an emitter formed in the base. The transistor (42) provides a high operating voltage without requiring an increased thickness epitaxial layer or additional processing steps. A high Hfe transistor and high voltage Schottky diode are also described. <IMAGE></p> |
申请公布号 |
EP1233456(A2) |
申请公布日期 |
2002.08.21 |
申请号 |
EP20020009308 |
申请日期 |
1994.05.02 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HUTTER, LOUIS N.;CORSI, MARCO |
分类号 |
H01L21/8249;H01L27/06;H01L29/10;H01L29/732;H01L29/872;(IPC1-7):H01L29/732 |
主分类号 |
H01L21/8249 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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