Process of manufacturing a semiconductor device

摘要

A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer (14) containing In and having a composition different from InP and a second III-V compound semiconductor layer (14A) containing In. The second III-V compound semiconductor layer (14A) is formed over the first III-V compound semiconductor layer (14) and growing an InP layer (16A, 16B) at regions adjacent the stacked structure to form a stepped structure (16a, 16b) of InP. The process further includes the step of wet-etching the stepped structure (16a, 16b) and the second III-V compound semiconductor layer (14A) using an etchant containing hydrochloric acid and acetic acid to remove at least the second III-V compound semiconductor layer (14A).