发明名称 |
WAFER EDGE EXPOSURE METHOD |
摘要 |
PURPOSE: A wafer edge exposure method is provided to prevent photoresist residues at a wafer edge portion by continuously exposing the wafer edge portion without stopping at meeting points between a wafer flat zone and a wafer curve. CONSTITUTION: A photoresist deposited at an edge portion of a wafer(100) is entirely exposed by circulating the wafer(100) to a defined direction without stopping as the first exposure. At this time, the first exposure is started at a flat zone(110) by a light supplier. Then, the flat zone(110) is repeatedly exposed after the first exposure, because the photoresist deposited on the flat zone(110) is thicker than the photoresist deposited on the other zone of the wafer(100). Then, the photoresist deposited at the edge portion of the wafer(100) is removed by dipping the wafer(100) into a developing solution.
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申请公布号 |
KR20020066626(A) |
申请公布日期 |
2002.08.21 |
申请号 |
KR20010006906 |
申请日期 |
2001.02.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BANG, JUN SEUNG;OH, SEO JONG;OH, YEONG IL;SHIN, WON YEOL |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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地址 |
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