| 摘要 |
<p>Two barrier layers are used for a via or contact. A thin CVD barrier (124) (e.g., SiN, TiSiN, TaSiN, etc.) is deposited over a structure including within a via or contact hole (106). A sputter etch is then performed to remove the CVD barrier (124) at the bottom of the via/contact. A second barrier (126) is deposited after the sputter etch. The second barrier (126) comprises a lower resistivity barrier such as Ta, Ti, Mo, W, TaN, WN, MoN or TiN since the second barrier remains at the bottom of the via or contact. A metal fill process can then be performed. <IMAGE></p> |
