Process for obtaining a layer of single crystal germanium or silicon on single cystal silicon or germanium substrate respectively, and multilayer products thus obtained

摘要

The process consists in depositing, by chemical vapor deposition using a mixture of silicon and germanium precursor gases, a single-crystal layer of silicon or germanium on a germanium or silicon substrate by decreasing or increasing the temperature in the range 800-450 DEG C. and at the same time by increasing the Si/Ge or Ge/Si weight ratio from 0 to 100% in the precursor gas mixture, respectively.