| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to prevent attenuations of an operation characteristic of a transistor and a reliability of a gate oxide by alleviating a compressive stress condensed at both sidewalls of a stiff STI(Shallow Trench Isolation). CONSTITUTION: The first thermal oxide(216) is formed on the second active region(II) and then, a silicon substrate(200) of the first active region(I) is exposed by sequentially etching a remaining nitride and a buffer oxide. Then, a dual gate oxide process is completed by forming the second thermal oxide(218) on the exposed surface of the silicon substrate of the first active region(I). At this time, the first thermal oxide(216) as an HV(High Voltage) gate oxide is formed between field oxides(210), thereby alleviating a compressive stress condensed at both sidewalls of a stiff STI(202) when performing an oxidation.
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